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SI2371EDS-T1-GE3 +BOM

Single P-Channel 30 V 0.045 O 35 nC Surface Mount Power Mosfet - SOT-23

Manufacturer:

VISHAY
Mfr.Part #:

SI2371EDS-T1-GE3
Datasheet:

SI2371EDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2371EDS-T1-GE3

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SI2371EDS-T1-GE3 General Description

The SI2371EDS-T1-GE3 is a small signal field-effect transistor with a maximum drain current rating of 4.8A and a drain-source voltage of 30V. It is a P-channel transistor with a silicon metal-oxide semiconductor construction, designed for use in various electronic applications. The TO-236AB package style offers easy mounting and efficient heat dissipation, making it a versatile choice for circuit design

Key Features

None

Application

Power Management for Portable and Consumer - Load Switches - OVP (Over Voltage Protection) Switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	4.8 A	Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	10.6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	52 ns	Product Type	MOSFET
Rise Time	8 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	52 ns	Typical Turn-On Delay Time	28 ns
Part # Aliases	SI2371EDS-T1-BE3	Unit Weight	0.000282 oz