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SI2374DS-T1-GE3 +BOM

Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer:

VISHAY
Mfr.Part #:

SI2374DS-T1-GE3
Datasheet:

SI2374DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2374DS-T1-GE3

SI2374DS-T1-GE3 General Description

The SI2374DS-T1-GE3 P-channel MOSFET transistor is a versatile component ideal for a wide range of high-speed switching applications. With a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -1.8A, this transistor offers reliable performance in various power management scenarios. Its low on-resistance (RDS(on)) of 0.038 ohms ensures efficient power distribution in portable devices, battery-powered equipment, and load switching applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5.9 A	Rds On - Drain-Source Resistance	30 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	7.7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	23 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	16 ns	Typical Turn-On Delay Time	10 ns
Width	1.6 mm	Part # Aliases	SI2374DS-T1-BE3
Unit Weight	0.000282 oz