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SI2399DS-T1-GE3 +BOM

Field-effect transistor in a SOT-23 housing, capable of handling up to -20V across the drain-source and 12V across the gate-source

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SI2399DS-T1-GE3 General Description

P-Channel 20 V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 34 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 10 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 9 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 28 ns Typical Turn-On Delay Time 22 ns
Part # Aliases SI2399DS-T1-BE3 Unit Weight 0.000282 oz

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