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See Technical Specifications

SI3932DV-T1-GE3 +BOM

N-channel 30V 3.7A Transistor in TSOP Package

Manufacturer:

VISHAY
Mfr.Part #:

SI3932DV-T1-GE3
Datasheet:

SI3932DV-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for SI3932DV-T1-GE3

SI3932DV-T1-GE3 General Description

The SI3932DV-T1-GE3 is a small signal field-effect transistor with a maximum drain current of 3.7A and a voltage rating of 30V. It is a 2-element, N-channel silicon metal-oxide semiconductor FET, designed for high performance in a variety of electronic applications. This transistor is HALOGEN FREE AND ROHS COMPLIANT, making it a environmentally-friendly choice for your projects. It comes in a TSOP-6 package, providing a compact and reliable solution for your circuit designs

Key Features

Pulse-width modulation
Low-side load drive
Error-free operation

Application

Load switch for portable applications DC/DC converters

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	3.7 A
Rds On - Drain-Source Resistance	58 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	6 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.4 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI3
Configuration	Dual	Fall Time	10 ns
Forward Transconductance - Min	10 S	Product Type	MOSFET
Rise Time	15 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	10 ns	Typical Turn-On Delay Time	10 ns
Part # Aliases	SI3932DV-GE3	Unit Weight	0.000705 oz