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SI4214DDY-T1-GE3 +BOM

Surface Mount MOSFET in SOIC-8 packaging, featuring dual N-Channel design capable of handling 30 volts with a low resistance of 0

Manufacturer:

VISHAY
Mfr.Part #:

SI4214DDY-T1-GE3
Datasheet:

SI4214DDY-T1-GE3 Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

30V
EDA/CAD Models:

Request Free CAD Models for SI4214DDY-T1-GE3

SI4214DDY-T1-GE3 General Description

The SI4214DDY-T1-GE3 is a small signal field-effect transistor with a 7.5A I(D) and 30V. It features a 2-element, N-channel, and is made of silicon metal-oxide semiconductor FET. Additionally, it is halogen-free and RoHS compliant, making it an environmentally friendly choice. The transistor is designed in a SOP-8 package, making it suitable for a wide range of applications

Key Features

Silicon-controlled rectifier technology
Low noise and radiation immunity
Wide operating temperature range

Application

Notebook System Power |Low Current DC/DC

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.5A	Rds On (Max) @ Id, Vgs	19.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 15V	Power - Max	3.1W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount