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SI4288DY-T1-GE3 +BOM

The SI4288DY-T1-GE3 comprises two N-Channel MOSFETs with a low threshold voltage of 2

Manufacturer:

VISHAY
Mfr.Part #:

SI4288DY-T1-GE3
Datasheet:

SI4288DY-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

40 V
EDA/CAD Models:

Request Free CAD Models for SI4288DY-T1-GE3

SI4288DY-T1-GE3 General Description

The SI4288DY-T1-GE3 is a N Channel MOSFET with a dual module configuration and a transistor case style of SOIC. It has 8 pins and is capable of handling a continuous drain current of 9.2A with a drain-source voltage of 40V. With an on-resistance of 0.0165ohm at a test voltage of 10V, this MOSFET is designed for high-performance applications. Its power dissipation of 3.1W and operating temperature range of -55°C to +150°C make it suitable for use in a wide range of environments

Key Features

Safe operating area for reliable performance
Precise DC/DC converter applications
Robustness against power supply noise

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	9.2 A	Drain-source On Resistance-Max	0.02 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	3.1 W
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON