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SI4590DY-T1-GE3 +BOM

Si4590DY Series 100 V 5.6 A 0.057 Ohm SMT N & P-Channel MOSFET - SO-8

Manufacturer:

VISHAY
Mfr.Part #:

SI4590DY-T1-GE3
Datasheet:

SI4590DY-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for SI4590DY-T1-GE3

SI4590DY-T1-GE3 General Description

The SI4590DY-T1-GE3 transistor combines high current and voltage ratings with versatile N-Channel and P-Channel elements, making it suitable for a variety of applications. Its silicon and metal-oxide semiconductor construction ensures durability and efficiency, while being HALOGEN FREE AND ROHS COMPLIANT makes it environmentally friendly. The SOP-8 package is compact and easy to work with, offering excellent thermal dissipation for optimal performance

Key Features

Ergonomic design for reduced fatigue
UL certified for reliable performance
PFC circuitry for efficient operation
Short-circuit protected for safe use
Overheat protection to prevent damage
Ruggedized casing for heavy-duty use

Specifications

Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	70 Weeks	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	5.6 A
Drain-source On Resistance-Max	0.057 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Surface Mount	YES	Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON