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SI4599DY-T1-GE3 +BOM

Product SI4599DY-T1-GE3 features a pair of N-channel and P-channel SOIC-8 MOSFETs

SI4599DY-T1-GE3 General Description

Mosfet Array 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SOIC

Key Features

Halogen-free According to IEC 61249-2-21 Available

TrenchFET Power MOSFET

100 % Rg and UIS Tested

Application

Backlight Inverter for LCD Display |Full Bridge Converter D1 S2

Specifications

Part Life Cycle Code Transferred Pin Count 8
Reach Compliance Code compliant ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 5.6 A Drain-source On Resistance-Max 0.0355 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL AND P-CHANNEL Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON

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In Stock: 4,503

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.436 $0.44
10+ $0.387 $3.87
30+ $0.364 $10.92
100+ $0.342 $34.20
500+ $0.329 $164.50
1000+ $0.321 $321.00

The prices below are for reference only.

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