This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI4922BDY-T1-E3 +BOM

Dual N-Channel 30 V 0.016 Ohms Surface Mount Power Mosfet - SOIC-8

Manufacturer:

VISHAY
Mfr.Part #:

SI4922BDY-T1-E3
Datasheet:

SI4922BDY-T1-E3 Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

30 V
EDA/CAD Models:

Request Free CAD Models for SI4922BDY-T1-E3

SI4922BDY-T1-E3 General Description

The SI4922BDY-T1-E3 is a powerful MOSFET transistor with dual N Channel polarity, ideal for applications requiring high efficiency. Its maximum Drain Source Voltage (Vds) is 30V, allowing for robust performance. With a Continuous Drain Current (Id) of 8000mA, this transistor can handle significant loads. The Rds(on) Test Voltage (Vgs) is specified at 12V, and the Threshold Voltage (Vgs Typ) is 1.8V. Housed in an 8-SOIC package, this transistor is environmentally friendly, meeting RoHS standards

Key Features

Halogen-free According to IEC 61249-2-21 Definition |TrenchFET® Power MOSFET |100 % R g and UIS tested |Compliant to RoHS Directive 2002/95/EC

Application

SWITCHING

Specifications

Part Life Cycle Code	Not Recommended	Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	8 A	Drain-source On Resistance-Max	0.024 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MS-012AA
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-50 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	3.1 W	Surface Mount	YES
Terminal Finish	Matte Tin (Sn)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON