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SI4925BDY-T1-E3 +BOM

P-channel MOSFET transistor capable of handling up to 30 volts and a maximum current of 5.3 amperes, enclosed in an 8-pin SOIC package

Manufacturer:

Vishay
Mfr.Part #:

SI4925BDY-T1-E3
Datasheet:

SI4925BDY-T1-E3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI4925BDY-T1-E3

SI4925BDY-T1-E3 General Description

The SI4925BDY-T1-E3 is a MOSFET transistor with a dual P channel polarity, designed for use in various electronic applications. With a drain source voltage of -30V and a continuous drain current of -7.1A, this transistor is capable of efficiently handling power in a wide range of circuits. The on resistance, Rds(on), is measured at 0.025ohm, with a test voltage of -10V. Additionally, this transistor is RoHS compliant, ensuring that it meets the necessary environmental and safety standards. Whether used in consumer electronics, industrial equipment, or automotive systems, the SI4925BDY-T1-E3 offers reliable performance and compliance with regulations

Key Features

The SI49BDY-T1-E3 features low gate threshold voltage.
It also has low gate charge, excellent thermal performance and a compact design.
This MOSFET is ideal for battery-powered applications such as automotive systems.

Application

Efficient voltage regulation
Industrial and consumer use
High performance transistor

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	7.1 A
Rds On - Drain-Source Resistance	25 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	50 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI4
Configuration	Dual	Fall Time	34 ns
Forward Transconductance - Min	20 S	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	60 ns	Typical Turn-On Delay Time	9 ns
Width	3.9 mm	Part # Aliases	SI4925BDY-T1
Unit Weight	0.006596 oz