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See Technical Specifications

SI4925DDY-T1-GE3 +BOM

Dual P-Channel MOSFET with 30-V D-S

Manufacturer:

Vishay
Mfr.Part #:

SI4925DDY-T1-GE3
Datasheet:

SI4925DDY-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI4925DDY-T1-GE3

SI4925DDY-T1-GE3 General Description

The Vishay SI4925DDY-T1-GE3 is a versatile MOSFET suitable for various applications. With its dual P-channel design and 30V drain source voltage, it provides reliable performance. The 8-pin configuration allows for easy integration into existing systems

Key Features

None

Application

Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	29 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	32 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	5 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI4
Configuration	Dual	Fall Time	12 ns
Forward Transconductance - Min	23 S	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	8 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	45 ns	Typical Turn-On Delay Time	10 ns
Width	3.9 mm	Part # Aliases	SI4925DDY-GE3
Unit Weight	0.006596 oz