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MOSFET Array Transistor featuring Dual N-Channel Configuration, 60V Voltage Rating, 6
SOIC-8Manufacturer:
Mfr.Part #:
SI4946BEY-T1-GE3
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
EDA/CAD Models:
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MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 3.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 6.5 A |
Rds On - Drain-Source Resistance | 41 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 17 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 3.7 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI4 |
Configuration | Dual | Fall Time | 10 ns |
Forward Transconductance - Min | 24 S | Product Type | MOSFET |
Rise Time | 12 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 10 ns |
Part # Aliases | SI4946BEY-GE3 | Unit Weight | 0.026455 oz |
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