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SI4948BEY-T1-GE3 +BOM

Transistor MOSFET Array Dual P-CH 60V 2.4A 8-Pin SOIC T/R

Manufacturer:

VISHAY
Mfr.Part #:

SI4948BEY-T1-GE3
Datasheet:

SI4948BEY-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

60 V
EDA/CAD Models:

Request Free CAD Models for SI4948BEY-T1-GE3

SI4948BEY-T1-GE3 General Description

The SI4948BEY-T1-GE3 MOSFET is a high-performance power transistor with a P-Channel configuration and a maximum Drain Source Voltage of -60V. With a low on-resistance of 100mohm and a maximum Continuous Drain Current of -3.1A, this MOSFET offers efficient power management in a compact SOIC package. The dual module configuration and wide operating temperature range make it suitable for a variety of applications, from consumer electronics to industrial controls. Whether you need reliable performance in extreme temperatures or high power dissipation capabilities, the SI4948BEY-T1-GE3 MOSFET delivers on all fronts

Key Features

None

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	2.4 A	Drain-source On Resistance-Max	0.12 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MS-012AA
JESD-30 Code	R-PDSO-G8	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	2.4 W
Surface Mount	YES	Terminal Finish	PURE MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Transistor Element Material	SILICON