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SI5504BDC-T1-GE3 +BOM

N- and P-Channel 30 V (D-S) MOSFET

Manufacturer:

VISHAY
Mfr.Part #:

SI5504BDC-T1-GE3
Datasheet:

SI5504BDC-T1-GE3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

8
ECCN Code:

EAR99

SI5504BDC-T1-GE3 General Description

This transistor features 2 channels, one N-channel and one P-channel, allowing for versatile circuit design options. Made from Silicon, it provides reliable performance in a variety of environments. Additionally, it is a MOSFET, which means it offers high switching speeds and low input capacitance

Key Features

None

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	8	Reach Compliance Code
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	4 A
Drain-source On Resistance-Max	0.065 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-XDSO-C8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	3.12 W
Pulsed Drain Current-Max (IDM)	10 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn)
Terminal Form	C BEND	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON