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SI7232DN-T1-GE3 MOSFET, featuring Dual N-Channel design
PowerPAK® 1212-8 DualManufacturer:
Mfr.Part #:
SI7232DN-T1-GE3
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
Application:
SWITCHING
Case Connection:
DRAIN
EDA/CAD Models:
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III. The SI7232DN-T1-GE3 is a cutting-edge N-Channel Power FET with a 10A maximum drain current and a low on-resistance of 0.0164ohm. Its 2-Element, leadless Powerpak-8 package enables compact and efficient system designs while providing excellent thermal management. The device's Silicon Metal-oxide Semiconductor FET technology ensures high switching speeds and low power dissipation, making it suitable for a wide range of power management and control applications. In addition, its HALOGEN FREE AND ROHS COMPLIANT construction demonstrates its compliance with strict environmental standards and regulations. Whether utilized in telecommunication infrastructure, computing systems, or industrial machinery, the SI7232DN-T1-GE3 offers superior energy efficiency and reliability
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
Application | SWITCHING | Case Connection | DRAIN |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | S-XDSO-C6 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | C BEND |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON |
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