This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI7465DP-T1-E3 +BOM

P-channel MOSFET with a voltage rating of 60V and a maximum current of 3.2A in an 8-pin PowerPAK SO package, part number SI7465DP-T1-E3

Manufacturer:

VISHAY
Mfr.Part #:

SI7465DP-T1-E3
Datasheet:

SI7465DP-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI7465DP-T1-E3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI7465DP-T1-E3 General Description

The SI7465DP-T1-E3 is a P-channel MOSFET designed for high-performance applications. With a continuous drain current of 5A and a drain-source voltage of -60V, this transistor offers low on resistance Rds(on) of 64mohm at a test voltage Vgs of 20V. The threshold voltage Vgs Typ is -3V, and the power dissipation Pd is 1.5W, making it suitable for demanding operating conditions. The PowerPAK SO case style with 8 pins provides easy integration into electronic devices, while the operating temperature range from -55°C to +150°C ensures reliable performance in diverse environments. Additionally, the SI7465DP-T1-E3 features a maximum junction temperature Tj of 150°C and a rise time of 9ns, further enhancing its robustness. With a termination type of SMD and a typical voltage Vds of 60V, this MOSFET is a versatile and reliable component for various applications

Key Features

None

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	3.2 A	Rds On - Drain-Source Resistance	64 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	26 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	3.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI7	Configuration	Single
Fall Time	30 ns	Forward Transconductance - Min	16 S
Product Type	MOSFET	Rise Time	9 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	65 ns
Typical Turn-On Delay Time	8 ns	Part # Aliases	SI7465DP-E3
Unit Weight	0.017870 oz