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SI7938DP-T1-GE3 +BOM

Dual-Source N-Channel MOSFET, 40V, PPAKSO8 Package, VISHAY - SI7938DP-T1-GE3

SI7938DP-T1-GE3 General Description

Mosfet Array 40V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Key Features

  • Advanced driver design
  • Low on-state resistance
  • MOSFET with high efficiency
  • Ruggedized package structure
  • Excellent thermal management
  • Precision current limit

Application

SWITCHING

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 5.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 65 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 46 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Configuration Dual Fall Time 15 ns
Forward Transconductance - Min 105 S Product Type MOSFET
Rise Time 19 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 40 ns Typical Turn-On Delay Time 25 ns
Part # Aliases SI7938DP-GE3 Unit Weight 0.017870 oz

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