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Ideal for use in circuit designs requiring high performance N-channel MOSFETs
PowerPAK-SO-8Manufacturer:
Mfr.Part #:
SI7960DP-T1-E3
Datasheet:
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain To Source Voltage (Vdss):
60V
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The dual N-channel MOSFET's impressive attributes make it an ideal choice for various applications. With its low on-resistance, it can effectively reduce power loss, thus enhancing overall system efficiency. Furthermore, the device's high current handling capacity makes it suitable for demanding applications that require reliable operation under heavy load conditions
Technology | MOSFET (Metal Oxide) | Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6.2A | Rds On (Max) @ Id, Vgs | 21mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - | Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
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