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SI7998DP-T1-GE3 +BOM

MOSFET with Dual N-Channel Configuration and 30-V Voltage Rating

Manufacturer:

Vishay
Mfr.Part #:

SI7998DP-T1-GE3
Datasheet:

SI7998DP-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for SI7998DP-T1-GE3

SI7998DP-T1-GE3 General Description

The leadless POWERPAK package of the SI7998DP-T1-GE3 enhances thermal dissipation and allows for easy surface mounting on PCBs. The SOP-8 configuration offers compatibility with standard soldering techniques, simplifying the assembly process for manufacturers

Key Features

High Efficiency
Small Size: 5 mm x 5 mm LFCSP
Low Noise: <0.5% TEC Current Ripple
Long-Term Temperature Stability: 0.01°C
Temperature Lock Indication
Temperature Monitoring Output
Oscillator Synchronization with an External Signal
Clock Phase Adjustment for Multiple Controllers
Programmable Switching Frequency up to 1 MHz
Thermistor Failure Alarm
Maximum TEC Voltage Programmability

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	25 A, 30 A
Rds On - Drain-Source Resistance	5.3 mOhms, 9.3 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	17 nC, 32 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	22 W, 40 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Configuration	Dual	Fall Time	10 ns, 13 ns
Forward Transconductance - Min	45 S, 71 S	Product Type	MOSFET
Rise Time	15 ns, 17 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	22 ns, 35 ns	Typical Turn-On Delay Time	20 ns, 26 ns
Part # Aliases	SI7998DP-GE3	Unit Weight	0.017870 oz