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SI9926CDY-T1-GE3 +BOM

MOSFET 20V Vds 12V Vgs SO-8

SI9926CDY-T1-GE3 General Description

Mosfet Array 20V 8A 3.1W Surface Mount 8-SOIC

Key Features

  • Pulse-width modulation
  • High-side switching
  • Silicon Carbide MOSFET
  • Rapid current decay
  • Low voltage drop
  • Efficient power transfer

Application

DC/DC Converter - Game Machine - PC

Specifications

Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 18mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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In Stock: 6,202

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.529 $0.53
10+ $0.468 $4.68
30+ $0.434 $13.02
100+ $0.403 $40.30
500+ $0.385 $192.50
1000+ $0.376 $376.00

The prices below are for reference only.

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