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SI9945BDY-T1-GE3 +BOM

Dual N-Channel 60V Metal-Oxide-Semiconductor Field-Effect Transistor

Manufacturer:

Vishay
Mfr.Part #:

SI9945BDY-T1-GE3
Datasheet:

SI9945BDY-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SI9945BDY-T1-GE3

SI9945BDY-T1-GE3 General Description

Featuring a compact 8-pin SOIC package, the SI9945BDY-T1-GE3 is a N-channel MOSFET designed for maximum efficiency and performance. With a drain source voltage of 60V and a maximum current of 5.3A, this transistor is capable of handling demanding applications. The on resistance Rds(on) is 46mohm, and the power dissipation Pd is 3.1W, ensuring reliable operation in a variety of conditions. The transistor has a threshold voltage Vgs Typ of 2.5V and is suitable for use in dual module configurations

Key Features

Automatic fault diagnosis
Fault-tolerant operation
Rapid recovery from faults
Pulse-shaping capability
Synchronized power module design
Real-time monitoring and reporting

Application

LCD TV CCFL Inverter |Load Switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	5.3 A	Rds On - Drain-Source Resistance	58 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	13 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	3.1 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI9	Configuration	Dual
Fall Time	10 ns	Forward Transconductance - Min	15 S
Product Type	MOSFET	Rise Time	15 ns, 65 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Typical Turn-Off Delay Time	10 ns, 15 ns
Typical Turn-On Delay Time	15 ns, 20 ns	Part # Aliases	SI9945BDY-GE3
Unit Weight	0.026455 oz