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See Technical Specifications

SIA517DJ-T1-GE3 +BOM

High-performance transistor for power applications

Manufacturer:

Vishay
Mfr.Part #:

SIA517DJ-T1-GE3
Datasheet:

SIA517DJ-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SIA517DJ-T1-GE3

SIA517DJ-T1-GE3 General Description

Not only is this transistor functional, but it is also environmentally friendly, as it is HALOGEN FREE and RoHS compliant. This means that it meets strict regulations regarding hazardous substances, providing peace of mind for users and ensuring sustainability in production processes

Key Features

None

Application

Load Switch for Portable Devices

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	4.5 A	Rds On - Drain-Source Resistance	29 mOhms, 61 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	400 mV
Qg - Gate Charge	15 nC, 20 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	6.5 W
Channel Mode	Enhancement	Tradename	TrenchFET, PowerPAK
Series	SIA	Configuration	Dual
Fall Time	10 ns, 20 ns	Forward Transconductance - Min	21 S, 11 S
Height	0.75 mm	Length	2.05 mm
Product Type	MOSFET	Rise Time	10 ns, 25 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel, 1 P-Channel	Typical Turn-Off Delay Time	22 ns, 30 ns
Typical Turn-On Delay Time	10 ns, 30 ns	Width	2.05 mm
Part # Aliases	SIA517DJ-GE3	Unit Weight	0.000988 oz