This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SIA906EDJ-T1-GE3 +BOM

Dual N Channel 20 V 0.046 O 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual

Manufacturer:

VISHAY
Mfr.Part #:

SIA906EDJ-T1-GE3
Datasheet:

SIA906EDJ-T1-GE3 Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

20V
EDA/CAD Models:

Request Free CAD Models for SIA906EDJ-T1-GE3

SIA906EDJ-T1-GE3 General Description

The SIA906EDJ-T1-GE3 is a MOSFET transistor with dual N-channel polarity, designed for high performance in power applications. It has a continuous drain current (Id) of 4.5A and a drain source voltage (Vds) of 20V, making it suitable for a wide range of power supply and switching applications. With an on resistance (Rds(on)) of 0.037ohm and a test voltage (Vgs) of 4.5V, this MOSFET provides low power dissipation and high efficiency in operation. Additionally, it features a threshold voltage that ensures reliable and precise switching behavior

Key Features

New thermally enhanced package
TrenchFET power MOSFET technology
Advanced thermal management

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A	Rds On (Max) @ Id, Vgs	46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V	Power - Max	7.8W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount