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SIA931DJ-T1-GE3 +BOM

Small Signal Field-Effect Transistor,

SIA931DJ-T1-GE3 General Description

Mosfet Array 30V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Key Features

  • Small thermal resistance
  • Low inductance package
  • Suitable for high-frequency applications

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99 Factory Lead Time 68 Weeks
Case Connection DRAIN Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.065 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 45 pF JESD-30 Code S-PDSO-N6
Number of Elements 2 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 7.8 W
Surface Mount YES Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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