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SLA4070 +BOM

Power Module Transistor with Independent Bipolar Junction

SLA4070 General Description

Bipolar (BJT) Transistor Array 4 PNP Darlington (Quad) 100V 5A 5W Through Hole 12-SIP

Key Features

  • Easy-to-use interface for effortless navigation
  • Multimedia support for various file formats
  • Wireless connectivity for hassle-free sharing

Application

    3D printing

Specifications

ECCN (US) EAR99 Part Status Obsolete
HTS 8542330001 Automotive No
PPAP No Type PNP
Configuration Quad Number of Elements per Chip 4
Maximum Collector-Emitter Voltage (V) 100 Maximum Collector Base Voltage (V) 100
Maximum Emitter Base Voltage (V) 6 Maximum Base Emitter Saturation Voltage (V) 2@6mA@3A
Maximum Continuous DC Collector Current (A) 5 Maximum Collector Cut-Off Current (uA) 10
Maximum Collector-Emitter Saturation Voltage (V) 1.5@6mA@3A Minimum DC Current Gain 1000@3000mA
Maximum Power Dissipation (mW) 5000 Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150 Mounting Through Hole
PCB changed 12 Tab Tab
Pin Count 12 Lead Shape Through Hole

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In Stock: 7,165

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $11.026 $11.03
250+ $4.400 $1,100.00
500+ $4.253 $2,126.50
1000+ $4.181 $4,181.00

The prices below are for reference only.