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See Technical Specifications

SLA5041 +BOM

Effect Transistor, 10A I(D), 200V, 0.175ohm, 4-Element

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Mosfet Array 200V 10A 5W Through Hole 12-SIP

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	12	Reach Compliance Code
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	120 mJ
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	10 A	Drain-source On Resistance-Max	0.175 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSFM-T12
Number of Elements	4	Number of Terminals	12
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	40 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Element Material	SILICON
Series	-	Technology	MOSFET (Metal Oxide)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	10A	Rds On (Max) @ Id, Vgs	175mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V	Power - Max	5W
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Base Product Number	SLA50