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See Technical Specifications

SMUN5213T1G +BOM

NPN Bipolar Digital Transistor (BRT)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SMUN5213T1G
Datasheet:

SMUN5213T1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

NPN - Pre-Biased
Current - Collector (Ic) (Max):

100 mA
Voltage - Collector Emitter Breakdown (Max):

50 V
EDA/CAD Models:

Request Free CAD Models for SMUN5213T1G

Email: [email protected]

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SMUN5213T1G General Description

Seamlessly integrate the SMUN5213T1G into your electronic applications and experience a level of convenience like never before. This digital transistor is more than just a replacement for traditional devices, it's a game-changer. By combining a transistor with a monolithic bias network, this BRT eliminates the need for external resistors, streamlining your circuit design and reducing overall system costs. With the SMUN5213T1G, efficiency is no longer a luxury but a standard. Embrace the future of technology with this advanced device that promises to deliver superior performance and unparalleled convenience

Key Features

Increases Reliability
Minimizes Component Count
Simplifies PCB Design
Meets Automotive Industry Requirements

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	NPN - Pre-Biased	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA	Current - Collector Cutoff (Max)	500nA
Power - Max	202 mW	Mounting Type	Surface Mount
Base Product Number	SMUN5213