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SPB80N06S08ATMA1 +BOM

N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

SPB80N06S08ATMA1 General Description

N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Infineon Technologies Corporation Inventory

Key Features

  • N-channel - Normal Level -Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Avalanche test
  • Repetive Avalanche up to>
  • dv /dt rated
  • world's lowest RDS at 55V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series SIPMOS®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3660 pF @ 25 V
FET Feature - Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number SPB80N RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Configuration Single Height 4.4 mm
Length 10 mm Product Type MOSFET
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 9.25 mm Part # Aliases SPB80N06S-08 SP000084808
Unit Weight 0.139332 oz

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SPB80N06S08ATMA1 Datasheet PDF

Preliminary Specification SPB80N06S08ATMA1 PDF Download

SPB80N06S08ATMA1 PDF Preview

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