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SPD18P06PGBTMA1 +BOM
The SPD18P06PGBTMA1 MOSFET is characterized by its P-channel configuration, capable of handling voltages up to -60V and currents up to -18
TO-252-3-
Manufacturer:
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Mfr.Part #:
SPD18P06PGBTMA1
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Datasheet:
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Series:
SIPMOS®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
60 V
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EDA/CAD Models:
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SPD18P06PGBTMA1 General Description
When it comes to power supplies, motor control, and load switching, the SPD18P06PGBTMA1 power MOSFET is in a league of its own. Its high drain-source voltage rating and low on-resistance make it the go-to choice for high-power circuits where reliability and efficiency are non-negotiable. Whether you're in the industrial, automotive, or consumer electronics sector, this MOSFET will elevate your applications to new heights
Key Features
- Enhancement mode
- Avalanche rated
- Pb-free lead plating; RoHS compliant
Application
- Automotive
- Consumer
- DC-DC
- eMobility
- Motor control
- Notebook
- Onboard charger
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | SIPMOS® |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 18.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 130mOhm @ 13.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SPD18P06 | RHoS | yes |
PBFree | yes | HalogenFree | no |
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SPD18P06PGBTMA1 Datasheet PDF
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In Stock: 6,528
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