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SS8550 +BOM

Bipolar (BJT) Transistor PNP 25 V 1.5 A 100MHz 300 mW Surface Mount SOT-23

  • Manufacturer:

    MDD

  • Mfr.Part #:

    SS8550

  • Datasheet:

    SS8550 Datasheet (PDF) pdf-icon

  • Transistor Type:

    PNP

  • Current - Collector (Ic) (Max):

    1.5 A

  • Voltage - Collector Emitter Breakdown (Max):

    25 V

  • Vce Saturation (Max) @ Ib, Ic:

    500mV @ 80mA, 800mA

  • EDA/CAD Models:

    eda-cad.png Request Free CAD Models for SS8550

SS8550 General Description

Bipolar (BJT) Transistor PNP 25 V 1.5 A 100MHz 300 mW Surface Mount SOT-23

Key Features

  • Complementary to SS8050
  • Collector Current : IC = 1.5 A
  • Power Dissipation, PD = 1 W (TC = 25°C )

Application

  • This product is general usage and suitable for many different applications.
  • Ideal for Push - Pull configuration

Specifications

Transistor Type PNP Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V
Power - Max 300 mW Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 25 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 1.5 A
Pd - Power Dissipation 1 W Gain Bandwidth Product fT 200 MHz
Maximum Operating Temperature + 150 C Series SS8550
Continuous Collector Current 1.5 A DC Collector/Base Gain hfe Min 85
DC Current Gain hFE Max 300 Height 4.7 mm
Length 4.7 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10000 Subcategory Transistors
Technology Si Width 3.93 mm
Unit Weight 0.008466 oz

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