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STD10PF06T4 +BOM

P-Channel STripFET II POWER MosFet with 60V voltage rating and 0.2 Ohm resistance

STD10PF06T4 General Description

The STD10PF06T4 Power MOSFET transistor is a versatile and efficient component for managing power in a variety of applications. With a maximum drain-source voltage of 60 volts and a continuous drain current of 9.3 amperes, it offers reliable power handling capabilities for a wide range of requirements. Its low on-resistance of 0.1 ohms ensures minimal power loss and efficient power management, making it an excellent choice for power supplies, motor control, lighting, and DC-DC converters. Housed in a TO-252 package, the transistor is designed for easy installation and removal, adding to its convenience. Moreover, its high input capacitance of 1050 picofarads makes it suitable for high-frequency applications, further expanding its usefulness. The STD10PF06T4 stands out as a dependable option for applications requiring high current and voltage levels, thanks to its reliable performance and robust design

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 10 A Rds On - Drain-Source Resistance 180 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 40 W
Channel Mode Enhancement Series STD10PF06
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 5 S Height 2.4 mm
Length 6.6 mm Product Type MOSFET
Rise Time 40 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 20 ns Width 6.2 mm
Unit Weight 0.011640 oz

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