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See Technical Specifications

STD30NF06T4 +BOM

TO-252 Surface Mount Technology Package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STD30NF06T4
Datasheet:

STD30NF06T4 Datasheet (PDF)
Series:

STripFET™ II
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for STD30NF06T4

STD30NF06T4 General Description

Boasting a minimum threshold voltage (Vgs) of 4V and a maximum continuous drain current (Id) of 15A, the STD30NF06T4 MOSFET is a reliable choice for demanding circuitry. With its low on resistance (Rds(on) of 0.02ohm and high power dissipation capabilities, this N-channel transistor is well-suited for applications where efficiency and performance are key priorities

Key Features

100% AVALANCHE TESTED
TYPICAL CURRENT LIMIT = 10A
SURFACE-MOUNTING FOR EFFICIENT HEAT DISSIPATION
COMPACT DESIGN FOR SPACE-SAVING APPLICATIONS

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	STripFET™ II
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	28mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1750 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	70W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD30