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STD3N95K5AG +BOM

Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STD3N95K5AG
Datasheet:

STD3N95K5AG Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tape and Reel
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for STD3N95K5AG

STD3N95K5AG General Description

With its cutting-edge MDmesh K5 technology, the STD3N95K5AG product sets a new standard for high voltage N-channel Power MOSFETs. Its unique vertical structure enables a significant reduction in on-resistance and gate charge, delivering exceptional power density and efficiency for a wide range of applications that demand top-notch performance

Key Features

AEC-Q101 qualified
Industry’s lowest R_DS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tape and Reel
Temperature (°C) min	-	Temperature (°C) max	-
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	950 V
Id - Continuous Drain Current	2 A	Rds On - Drain-Source Resistance	4.3 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	3.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	45 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	MDmesh	Series	STD3N95K5AG
Configuration	Single	Fall Time	32.5 ns
Product Type	MOSFET	Rise Time	13.5 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	20.5 ns
Typical Turn-On Delay Time	8.5 ns	Unit Weight	0.011640 oz