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STD3PK50Z +BOM

High-Voltage Power MOSFET with P-Channel Configuration

STD3PK50Z General Description

P-Channel 500 V 2.8A (Tc) 70W (Tc) Surface Mount DPAK

Key Features

  • International standard package
  • Direct copper bonded Al2O3-ceramic base plate
  • Planar passivated chips
  • Isolation voltage 3600 V~

Specifications

Source Content uid STD3PK50Z Part Life Cycle Code Obsolete
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 4 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 11.2 A Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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