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STD4NK60ZT4 +BOM

Robust and efficient power management solution for modern electronics

STD4NK60ZT4 General Description

The STD4NK60ZT4 is a cutting-edge high-voltage device that stands out for its Zener-protected N-channel Power MOSFET technology. Developed by STMicroelectronics using the advanced SuperMESH™ platform, this MOSFET offers improved performance compared to traditional PowerMESH™ solutions. With a significant reduction in on-resistance, the STD4NK60ZT4 is ideal for applications that require high power efficiency and reliability. Its high level of dv/dt capability ensures reliable operation in even the most demanding conditions

Key Features

  • Ultra-high dv/dt capability
  • Zener-protection for safe operation
  • 100% tested for quality assurance
  • Low power consumption design

Application

SWITCHING

Specifications

Source Content uid STD4NK60ZT4 Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 50 Weeks
Avalanche Energy Rating (Eas) 120 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 2 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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