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STD80N6F6 +BOM

Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package

STD80N6F6 General Description

The STD80N6F6 N-channel Power MOSFET is a top-of-the-line product from STMicroelectronics, designed to meet the high power demands of modern technology. With a drain-source voltage of 60V and a continuous drain current of 80A, this MOSFET is a versatile component suitable for a wide range of high-power applications. Its low on-resistance of 6mΩ enhances overall efficiency and reduces power losses, making it an ideal choice for power-critical applications where reliability and performance are paramount

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tape and Reel
Temperature (°C) min - Temperature (°C) max -

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
S
S**d 06/10/2022

Good company and Vicky is very nice

3
K
K**n 09/19/2021

Passed the protection period, the give 5 star, then came and diodes.

8
J
J**e 06/02/2021

Works with 2 volts. Max output-27 v. To increase uvs twist counterclockwise. At 2a the input is heated.

17
J
J**n 12/05/2020

Good bms i have been using for a short time!!! Never once did the defective.

18

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