This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

STD95N4F3 +BOM

N-channel 40 V, 5.0 mOhm, 80 A, DPAK STripFET(TM) III Power MOSFET

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STD95N4F3
Datasheet:

STD95N4F3 Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tape and Reel
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for STD95N4F3

STD95N4F3 General Description

STD95N4F3 is a Power MOSFET device manufactured using STripFET™ III technology, which is developed to minimize on-resistance and gate charge, leading to exceptional switching performance. With its low on-resistance, this MOSFET can handle high current and voltage levels, making it suitable for a variety of industrial and automotive applications. Its outstanding switching characteristics make it an ideal choice for power management in DC-DC converters, motor control, and battery management systems. The use of STripFET™ III technology ensures that this MOSFET delivers superior efficiency and reliability

Key Features

Standard threshold drive
100% avalanche tested

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tape and Reel
Temperature (°C) min	-	Temperature (°C) max	-
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	80 A	Rds On - Drain-Source Resistance	5.8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	40 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	110 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	STripFET	Series	STD95N4F3
Configuration	Single	Fall Time	15 ns
Height	2.4 mm	Length	6.6 mm
Product Type	MOSFET	Rise Time	50 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	40 ns
Typical Turn-On Delay Time	15 ns	Width	6.2 mm
Unit Weight	0.011640 oz