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Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package
TO-247-3Manufacturer:
Mfr.Part #:
STGWA50IH65DF
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Case Connection:
COLLECTOR
EDA/CAD Models:
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Introducing the STGWA50IH65DF, a cutting-edge IGBT with a voltage rating of 650 V. This innovative design utilizes a proprietary trench gate field-stop structure to deliver superior performance in both conduction and switching losses. Specifically engineered for soft commutation, this product includes a high-efficiency freewheeling diode to ensure maximum efficiency in resonant and soft-switching applications
Source Content uid | STGWA50IH65DF | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 100 A |
Collector-Emitter Voltage-Max | 650 V | Configuration | SINGLE WITH BUILT-IN DIODE |
Gate-Emitter Thr Voltage-Max | 7 V | Gate-Emitter Voltage-Max | 20 V |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 300 W | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 294 ns | VCEsat-Max | 2 V |
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