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SUD50P08-25L-E3 +BOM

TO-252-packaged P-channel MOSFET capable of handling voltages up to -80V and currents up to -50A

SUD50P08-25L-E3 General Description

The SUD50P08-25L-E3 MOSFET is a top-of-the-line P-channel transistor that boasts impressive specifications for power management applications. With a drain-source voltage rating of -80V and a continuous drain current capacity of -50A, this device offers unparalleled performance and efficiency. The ultra-low on-resistance of 0.021ohm ensures minimal power loss and heat dissipation, making it a perfect choice for high-power industrial and automotive applications. The TO-252 case style provides a compact and durable package for easy installation and maintenance. Operating at a maximum temperature of 175°C, this MOSFET is capable of withstanding extreme conditions while maintaining optimal performance. The TrenchFET Series designation highlights the cutting-edge technology and reliability of this product, ensuring long-term stability and durability

Key Features

  • None
  • Specifications

    Product Category MOSFET REACH Details
    Technology Si Mounting Style SMD/SMT
    Transistor Polarity P-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 50 A
    Rds On - Drain-Source Resistance 25.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 105 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
    Pd - Power Dissipation 136 W Channel Mode Enhancement
    Tradename TrenchFET Series SUD
    Configuration Single Fall Time 110 ns
    Forward Transconductance - Min 52 S Height 2.38 mm
    Length 6.73 mm Product Type MOSFET
    Rise Time 220 ns Factory Pack Quantity 2000
    Subcategory MOSFETs Transistor Type 1 P-Channel
    Typical Turn-Off Delay Time 105 ns Typical Turn-On Delay Time 45 ns
    Width 6.22 mm Part # Aliases SUD50P08-25L-BE3
    Unit Weight 0.011640 oz

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