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SUD50P10-43L-E3 +BOM

Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3

Manufacturer:

VISHAY
Mfr.Part #:

SUD50P10-43L-E3
Datasheet:

SUD50P10-43L-E3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SUD50P10-43L-E3

SUD50P10-43L-E3 General Description

The SUD50P10-43L-E3 MOSFET is a P Channel transistor designed for high power applications with a maximum drain source voltage of -100V and a continuous drain current of -38A. With a low on resistance of 0.036ohm and a threshold voltage of -3V, this MOSFET offers efficient performance in power management systems. The TO-252AA transistor case style provides easy mounting and heat dissipation, allowing for a maximum power dissipation of 136W. Operating temperature ranges from -50°C to 175°C, making it suitable for a wide range of environments. This MOSFET is a reliable and versatile component for various power electronics applications

Key Features

TrenchFET® Power MOSFET

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	37.1 A
Rds On - Drain-Source Resistance	43 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	106 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	136 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SUD
Configuration	Single	Fall Time	100 ns
Forward Transconductance - Min	38 S	Height	2.38 mm
Length	6.73 mm	Product Type	MOSFET
Rise Time	20 ns, 160 ns	Factory Pack Quantity	2000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	100 ns, 110 ns	Typical Turn-On Delay Time	15 ns, 42 ns
Width	6.22 mm	Part # Aliases	SUD50P10-43L-BE3
Unit Weight	0.011640 oz