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SUP75N08-10 +BOM

High-power N-Channel MOSFET

Manufacturer:

Vishay
Mfr.Part #:

SUP75N08-10
Datasheet:

SUP75N08-10 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Tradename:

TrenchFET
Series:

SUP
EDA/CAD Models:

Request Free CAD Models for SUP75N08-10

SUP75N08-10 General Description

The SUP75N08-10 from Vishay Siliconix is a top-of-the-line N-channel enhancement-mode power MOSFET, ideal for high voltage and high current applications. With a drain-source voltage of 75V and a continuous drain current of 75A, this MOSFET is suitable for a wide range of power management tasks. Its low on-resistance of 10mΩ at a VGS of 10V ensures minimal power losses, while the low gate charge of 130nC enables efficient switching performance. The TO-220 package enhances its thermal performance and allows for easy mounting on a heat sink. With a maximum junction temperature of 175°C, the SUP75N08-10 promises reliable operation in various temperature environments, and its built-in protection features offer additional robustness and reliability in demanding applications

Key Features

High-voltage N-channel MOSFET
90V drain-source voltage
5A continuous drain current
15mΩ RDS(on) max

Application

Inverter circuits for machines
Battery management systems implemented
Industrial automation excellence

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Tradename	TrenchFET
Series	SUP	Height	15.49 mm
Length	10.41 mm	Product Type	MOSFET
Factory Pack Quantity	50	Subcategory	MOSFETs
Width	4.7 mm	Unit Weight	0.068784 oz