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TSC5802DCHC5G +BOM
Bipolar (BJT) Transistor NPN 450 V 2.5 A 30 W Through Hole TO-251 (IPAK)
TO-251-3ShortLeads,IPak,TO-251AA-
Manufacturer:
Taiwan Semiconductor Corporation
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Mfr.Part #:
TSC5802DCHC5G
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Datasheet:
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
2.5 A
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Voltage - Collector Emitter Breakdown (Max):
450 V
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Vce Saturation (Max) @ Ib, Ic:
3V @ 600mA, 2A
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EDA/CAD Models:
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TSC5802DCHC5G General Description
Bipolar (BJT) Transistor NPN 450 V 2.5 A 30 W Through Hole TO-251 (IPAK)
Specifications
Series | - | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2.5 A | Voltage - Collector Emitter Breakdown (Max) | 450 V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 600mA, 2A | Current - Collector Cutoff (Max) | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 5V | Power - Max | 30 W |
Frequency - Transition | - | Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | TSC5802 |
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In Stock: 6,518
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