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SOT-23-3 packaged MOSFET with P-Channel, -20V Vds, and -4.7A Id
SOT-23-3Manufacturer:
Taiwan Semiconductor
Mfr.Part #:
TSM2323CX RFG
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
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P-Channel 20 V 4.7A (Ta) 1.25W (Ta) Surface Mount SOT-23
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 31 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 12.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 48 ns | Forward Transconductance - Min | 16 S |
Moisture Sensitive | Yes | Product | Rectifiers |
Product Type | MOSFET | Rise Time | 43 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 71 ns |
Typical Turn-On Delay Time | 25 ns | Unit Weight | 0.000282 oz |
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