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See Technical Specifications

UMT1NTN +BOM

6-Pin Bipolar Transistor for Low Power Applications

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

UMT1NTN
Datasheet:

UMT1NTN Datasheet (PDF)
Transistor Type:

2 PNP (Dual)
Current - Collector (Ic) (Max):

150mA
Voltage - Collector Emitter Breakdown (Max):

50V
Vce Saturation (Max) @ Ib, Ic:

500mV @ 5mA, 50mA
EDA/CAD Models:

Request Free CAD Models for UMT1NTN

UMT1NTN General Description

The UMT1NTN product offers a compact solution for integrating two transistors in various electronic devices. It is designed for applications requiring high performance and reliability, such as pre-amplifier differential amplification circuits, high-frequency oscillators, and driver ICs. The ultra-compact package of this product makes it suitable for use in space-constrained environments where size and weight are critical factors

Key Features

1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.

Application

AMPLIFIER

Specifications

Transistor Type	2 PNP (Dual)	Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Power - Max	150mW	Frequency - Transition	140MHz
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	UMT1