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UMC2NT1G +BOM
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)
SC70-5-
Manufacturer:
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Mfr.Part #:
UMC2NT1G
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Datasheet:
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Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Resistor - Base (R1):
22kOhms
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EDA/CAD Models:
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Availability: 3601 PCS
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UMC2NT1G General Description
The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium.
Key Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
- Pb-Free Packages are Available
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Specifications
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased | Series | - |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V | Resistor - Base (R1) | 22kOhms |
Resistor - Emitter Base (R2) | 22kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - | Power - Max | 150mW |
Mounting Type | Surface Mount | Base Product Number | MC2 |
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UMC2NT1G Datasheet PDF
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In Stock: 3,601
Minimum Order: 1
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