This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

UMZ1NT1G +BOM

NPN PNP Bipolar Transistor

Manufacturer:

onsemi
Mfr.Part #:

UMZ1NT1G
Datasheet:

UMZ1NT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for UMZ1NT1G

UMZ1NT1G General Description

When it comes to selecting a bipolar transistor for general purpose amplifier applications, the UMZ1NT1G Dual NPN PNP Bipolar Transistor stands out for its superior performance and reliability. This transistor is designed to meet the demands of modern electronics, providing stable amplification for a wide range of applications. With its compact SOT-363/SC-88 package, the UMZ1NT1G transistor is easy to work with and offers excellent thermal performance for reliable operation

Key Features

Wide Input Voltage Range Available
Precise Control over Current and Voltage
High-Speed Performance and Low Jitter

Specifications

Source Content uid	UMZ1NT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	13 Weeks, 5 Days	Collector Current-Max (IC)	0.2 A
Collector-Emitter Voltage-Max	50 V	Configuration	SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE)	200	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	NPN AND PNP	Power Dissipation-Max (Abs)	0.256 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	114 MHz