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US5U1TR +BOM
This product is a Transistor MOSFET in N-channel configuration, designed for operation at 30V and 1
6-SMD(5Leads),FlatLead-
Manufacturer:
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Mfr.Part #:
US5U1TR
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
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Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
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EDA/CAD Models:
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Availability: 6871 PCS
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US5U1TR General Description
The US5U1TR ROHM MOSFETs are engineered to have low RDS(on) resistance, achieved through the incorporation of cutting-edge micro-processing technologies. This means that these devices offer efficient and reliable performance, enabling them to meet the demands of diverse applications in the market. With a wide lineup available, including hybrid types that combine MOSFETs with Schottky Barrier Diodes, users have the flexibility to choose the right component for their specific requirements. Whether it's for power management, motor control, or any other electronics application, these MOSFETs deliver superior functionality and versatility
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.5 V |
Vgs (Max) | ±12V | Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 10 V |
FET Feature | Schottky Diode (Isolated) | Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | US5U1 |
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In Stock: 6,871
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.562 | $0.56 |
200+ | $0.225 | $45.00 |
500+ | $0.217 | $108.50 |
1000+ | $0.213 | $213.00 |
The prices below are for reference only.