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See Technical Specifications

US6M11TR +BOM

Product Description: 1W 1V@1mA 1PCSN-Channel&1PCSP-Channel TUMT-6 MOSFETs ROHS for US6M11TR

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

US6M11TR
Datasheet:

US6M11TR Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel

US6M11TR General Description

With a broad lineup that includes compact types, high-power types, and complex types, the US6M11TR offers unparalleled flexibility to cater to different needs in the market. Whether you require a compact solution for space-constrained applications or a high-power option for demanding tasks, this product has you covered

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V, 12 V
Id - Continuous Drain Current	1.5 A, 1.3 A	Rds On - Drain-Source Resistance	180 mOhms, 260 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	1.8 nC, 2.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Series	US6M11
Configuration	Dual	Fall Time	3 ns, 9 ns
Product Type	MOSFET	Rise Time	5 ns, 10 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel, 1 P-Channel	Typical Turn-Off Delay Time	20 ns, 30 ns
Typical Turn-On Delay Time	5 ns, 8 ns	Part # Aliases	US6M11
Unit Weight	0.000265 oz