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US6K4TR +BOM

Mosfet Array with 2 N-Channel, Dual Configuration, for Surface Mount Applications

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

US6K4TR
Datasheet:

US6K4TR Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel

US6K4TR General Description

Our US6K4TR product is a cutting-edge Complex type MOSFET that is designed to deliver low ON-resistance, thanks to advanced micro-processing technologies. With a wide range of applications, this MOSFET is ideal for a variety of industries and purposes. Whether you need a compact type for space-saving solutions or a high-power type for demanding applications, our broad lineup has got you covered

Key Features

Rectified forward current : 4A（US4KB80R） , 6A（US6KB80R） , 8A（US8KB80R） , （with heat sink） 10A（US10KB80R） , 15A（US15KB80R） , 30A（US30KB80R）
Large current capacity of 30A with compact package
High IFSM and High Voltage
UL approved Bridge Rectifier Diodes, registered in file number E142422
High-density mounting for improved space efficiency through the use of SIP（Single In-Line Package）

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.5 A	Rds On - Drain-Source Resistance	130 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	1.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Series	US6K4
Configuration	Dual	Fall Time	3 ns
Forward Transconductance - Min	1.6 S	Height	0.77 mm
Length	2 mm	Product Type	MOSFET
Rise Time	5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	20 ns	Typical Turn-On Delay Time	5 ns
Width	1.7 mm	Part # Aliases	US6K4
Unit Weight	0.000265 oz