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See Technical Specifications

US6M1TR +BOM

4V Drive N-channel MOSFET + 2.5V Drive P-channel MOSFET

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

US6M1TR
Datasheet:

US6M1TR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

30V, 20V
EDA/CAD Models:

Request Free CAD Models for US6M1TR

US6M1TR General Description

These radios are designed to operate in harsh and challenging environments, ensuring that they can withstand extreme temperatures, rough terrain, and interference from hostile forces. Their lightweight and portable design make them ideal for use by soldiers in the field, while their ease of operation further enhances their utility in mission-critical situations

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25°C	1.4A, 1A	Rds On (Max) @ Id, Vgs	240mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 10V	Power - Max	1W
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	US6M1